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2SK3700
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)
2SK3700
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 30 5 15 150 351 5 15 150 -55 to150 Unit V V V A W mJ A mJ C C
Pulse (Note 1)
1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
JEDEC JEITA TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit C/W C/W
Note 1: Ensure that the temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25C (initial), L = 25.7mH, RG = 25 , IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD400 V, VGS = 10 V, ID = 5 A Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 50 10 V VGS 0V ID = 3 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10A, VDS = 0V VDS = 720 V, VGS = 0 V IG = 10mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 20 V, ID = 3 A Min 30 900 2.0 2.0 VDD400 V Typ. 2.0 4.5 1150 20 100 30 70 60 170 28 17 11 Max 10 100 4.0 2.5 ns nC pF Unit A V A V V S
RL = 133
Duty < 1%, tw = 10 s =
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 900 5.4 Max 5 15 -1.7 Unit A A V ns C
Marking
TOSHIBA
K3700
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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ID - VDS
5 8 Common source Tc = 25C 10 Pulse Test 6 6 5.5 5.25 5 Common source Tc = 25C Pulse Test
ID - VDS
10 6 8 5.5 5.25
4
(A)
(A)
4 3 5 2 4.75 1
ID
Drain current
ID
3 5 2 4.75 VGS = 4 .5V VGS = 4.5 V 1 0 0
Drain current
0 0
4
8
12
16
20
24
10
20
30
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
10 Common source VDS = 10 V Pulse Test 20
VDS - VGS
Common source Tc = 25C Pulse Test
(V) VDS
8
14
ID (A)
6
12
ID = 5 A
4 Tc = -55C 2 100 25 0 0
Drain-source voltage
Drain current
8
3
4
1.5
2
4
6
8
10
0 0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID
Forward transfer admittance Yfs (S)
Common source VDS = 10 V Pulse Test Tc = -55C 25 100 1
RDS (ON) - ID
Drain-source ON resistance RDS (ON) ()
10
10
5
3
VGS = 10 V15V
Common source Tc = 25C VGS = 10 V Pulse Test 1 0.01 0.1 1 10
0.1 0.1
1
10
Drain current ID (A)
Drain current ID (A)
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RDS (ON) - Tc
10 10
IDR - VDS DRAIN REVERSE CURRENT IDR (A)
COMMON SOURCE 5 3 Tc = 25C PULSE TEST
DRAIN-SOURCE ON RESISTANCE RDS (ON) ( )
COMMON SOURCE PULSE TEST 8
6
ID = 5A 3 VGS = 10 V 1.5
1 0.5 0.3 10
4
2
1 3 -0.4 VGS = 0, -1 V -0.8 -1.2 -1.6
0 -80
-40
0
40
80
120
160
0.1 0
CASE TEMPERATURE
Tc
(C)
DRAIN-SOURCE VOLTAGE
VDS
(V)
CAPACITANCE - VDS
10000 5
Vth - Tc
(pF)
Ciss 1000
GATE THRESHOLD VOLTAGE Vth (V)
4
C
3
CAPACITANCE
Coss
2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 -80 -40 0 40 80 120 160
100 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 10 0.1 1 3 5 10 30 50 100 Crss
DRAIN-SOURCE VOLTAGE
VDS
(V)
CASE TEMPERATURE
Tc
(C)
PD - Tc VDS (V)
200
DYNAMIC INPUT / OUTPUT CHARACTERISTICS (V) GATE-SOURCE VOLTAGE VGS
500 20
PD (W)
150
400
VDS
16
VDD = 100 V 400 VGS 200
DRAIN-SOURCE VOLTAGE
Drain power dissipation
300
12
100
200
8
COMMON SOURCE ID = 5 A Tc = 25C PULSE TEST
50
100
4
0
0
0 10 20 30 40
0
0
40
80
120
160
200
Case temperature Tc (C)
TOTAL GATE CHARGE
Qg
(nC)
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2SK3700
rth - tw
NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
10
1
Duty=0.5 0.2
0.1
0.1 0.05 0.02 PDM SINGLE PULSE 0.01 t T Duty = t/T t/T Duty = RthRth (ch-c) = 1.25C/W (ch-c) = 0.833C/W
0.01
0.001 10
100
1
10
100
1
10
PULSE WIDTH
tw (s)
SAFE OPERATING AREA
100
EAS - Tch
500
ID max (PULSED) * 10 ID max (CONTINUOUS) *
(A)
1 ms *
AVALANCHE ENERGY EAS (mJ)
100 s *
400
300
DRAIN CURRENT ID
1
DC OPERATION Tc = 25C
200
0.1
SINGLE NONREPETITIVE PULSE Tc=25 CURVES LINEARLY MUST WITH BE DERATED IN INCREASE
100
0.01 1
TEMPERATURE.
VDSS max 100 1000 10000
0 25
50
75
100
125
150
10
VDS
(V)
CHANNEL TEMPERATURE (INITIAL) Tch (C) BVDSS IAR VDD TEST CIRCUIT RG = 25 VDD = 90 V, L = 25.7mH VDS
15 V -15 V
WAVE FORM
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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